This electronic component is a P-Channel MOSFET housed in a compact SOT23-3L package, ideal for applications requiring efficient power management. The component offers reliable performance with low on-resistance and high-speed switching capabilities, making it suitable for a range of low-voltage applications. Its compact size and original stock quality ensure ease of integration into various electronic circuits, providing superior control in small form factor designs.
Encapsulation: SOT23-3L
FET Type: P-channel
Drain-source Voltage (Vdss): -60V
Drain Current (Id): -4A
Drain-Source On-Resistance (RDS On): 106mΩ
Gate-Source Voltage (Vgs): ±20 V
Gate Charge (Qg): 25nC
Reverse Recovery Time: 25nS
Operating Temperature Range: -55 To 150 ℃
Installation Type: Patches
Application Areas: 3C Digital
Conductivity Method: Enhanced
Features: Design for High-Density Batteries with Ultra-Low Rdson
Manufacture country: China
Instructions included: No
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