This high-performance N-channel MOSFET transistor is designed to handle demanding electrical applications with efficiency and reliability. Encased in a robust TO-247 package, it offers excellent thermal management and low on-state resistance, ensuring optimal performance even under challenging conditions. Ideal for use in power management systems, motor control, and switching applications, this transistor provides strong current handling capabilities and fast switching speeds. Its durability and efficiency make it a preferred choice for engineers and technicians seeking dependable solutions for their electronic circuit designs.
Encapsulation: TO-247
FET Type: N-channel
Drain-source Voltage (Vdss): 650V
Drain Current (Id): 28A
Drain-Source On-Resistance (RDS On): 120mΩ
Gate-source Voltage (Vgs): ±30V
Gate Charge (Qg): 37.5 nC
Operating Temperature Range: -55...+150 °C
Installation Type: Plugins
Manufacture country: China
Instructions included: No
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