This product is a robust and efficient Insulated Gate Bipolar Transistor (IGBT), designed to handle high power applications. With a voltage rating of 1.2KV and a current capacity of 80A, it offers excellent performance in demanding electrical settings. Packaged in a TO247-3 casing, this transistor is ideal for usage in switching operations, motor drives, and other industrial applications. It ensures reliability and efficiency, making it a suitable choice for engineers and technicians seeking durable and high-performance transistor solutions.
Installation Type: Through hole
Application Areas: Industrial field
Manufacture country: China
Instructions included: No