AP50N06D TO-252-3L N-channel MOSFET Transistor In Stock

This product is an N-channel MOSFET transistor housed in a TO-252-3L package, designed for efficient power management in electronic circuits. With its robust construction, it provides excellent performance in switching and amplification applications. The transistor is ideal for use in a variety of power conversion and motor control applications, delivering reliable performance and energy efficiency. It features low on-resistance and high-speed switching capabilities, making it a versatile component for electronic enthusiasts and professionals looking to enhance their projects with reliable power components. Encapsulation: TO-252-3L FET Type: N-channel Drain-source Voltage (Vdss): 60V Drain Current (Id): 50A Drain-Source On-Resistance (RDS On): Less than 16mΩ Gate-source Voltage (Vgs): ±20V Gate Charge (Qg): 19.3nc Reverse Recovery Time: 16.3ns Maximum Power Dissipation: 2000 Operating Temperature Range: -55 to 150 ℃ Installation Type: Surface mount type Environmental Thermal Resistance Junction: 62 ℃/W Temperature Coefficient: -5.68mV/℃ Manufacture country: China Instructions included: No