SLD5N65SV TO252 650V N-channel MOSFET Chip, Original Field Effect Transistor

This high-performance N-channel MOSFET chip is designed for a variety of electronic applications, offering a robust 650V voltage capacity. With its advanced field-effect transistor technology, it ensures efficient power management and reliable operation. Its TO252 package provides a compact form factor ideal for space-constrained environments, allowing for easy integration into various circuit designs. This component is perfect for enhancing the performance and efficiency of your next electronics project. Encapsulation: TO252 FET Type: N-channel Drain-source Voltage (Vdss): 650 V Drain Current (Id): 5A Drain-Source On-Resistance (RDS On): 2.2Ω Gate-source Voltage (Vgs): ±30 V Reverse Recovery Time: 250ns Maximum Power Dissipation: 32000 Installation Type: Surface Mount Manufacture country: China Instructions included: No